Глава 3. Высокочастотные микропереключатели и микрореле

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Литература 255

Альтернативным способом решения этой проблемы является применение электролитического метода, при котором соотвествующие металлы осаждаются на контактах после формрфования КМОП структуры и изготовления микропереключателя. Достоинство такого подхода - технология, полностью совместимая с изготовлением традиционных ИС, за исключением финальной стадии нанесения металлических слоев.

Для систем беспроводной связи актуальным является размеш;е-ние на кристалле пассивных компонентов. Интеграция пассивных элементов в кристалл или на подложку позволяет уменьшать размеры устройства и повышать его надежность, что особенно важно для портативных устройств. Микротехнологии необходимы и для интеграции в кристалл магнитных компонентов, таких катушки индуктивности и трансформаторы. Для формирования интегрированных катушек с большой индуктивностью и развязывающих трансформаторов требуется применение методов напыления магнитных материалов и использование электролитических способов осаждения проводяш;их и/или магнитных слоев.

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Глава 3. Высокочастотные микропереключатели и микрореле

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